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| Advance Technical Information HiPerFET TM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFB 80N50Q2 V= DSS ID25 = RDS(on)= trr 500 V 80 A 55 m 250 ns PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 30 40 80 320 80 60 5.0 20 890 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 3.0 V DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 TJ = 25C TJ = 125C 5.0 V 200 nA 100 A 5 mA 55 m PLUS 264TM package for clip or spring mounting Space savings High power density (c) 2002 IXYS All rights reserved DS98958 (10/02) IXFB 80N50Q2 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 40 55 11400 VGS = 0 V, VDS = 25 V, f = 1 MHz 1620 320 29 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) 25 60 11 290 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 120 0.14 0.13 S pF pF pF ns ns ns ns nC nC nC Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 264TM Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = 0.5 * ID25 K/W K/W Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = 25A -di/dt = 100 A/s VR = 100 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 80 320 1.5 250 1.2 8 A A V ns C A Note: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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